Charge carrier transport and lifetimes in n-type and p-type phosphorene as 2D device active materials: an ab initio study

摘要

In this work, we provide a detailed analysis of phosphorene performance asn-type and p-type active materials. The study is based on first principlescalculation of phosphorene electronic structure, and resulting electron andhole scattering rates and lifetimes. Emphasis is put on extreme regimescommonly found in semiconductor devices, i.e. high electric fields and heavydoping, where impact ionization and Auger recombination can occur. We foundthat electron-initiated impact ionization is weaker than the hole-initiatedprocess, when compared to carrier-phonon interaction rates, suggestingresilience to impact ionization initiated breakdown. Moreover, calculatedminority electron lifetimes are limited by radiative recombination only, not byAuger processes, suggesting that phosphorene could achieve good quantumefficiencies in optoelectronic devices. The provided scattering rates andlifetimes are critical input data for the modeling and understanding ofphosphorene-based device physics.